Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …

Unlike the Si-SiO 2 interface, the SiC-SiO 2 interface has large defect densities. Though
nitridation has been shown to reduce the defect density, the effect of H remains an open …

A systematic study of the level positions of intrinsic and carbon defects in SiO 2 is presented,
based on density functional calculations with a hybrid functional in an α-quartz supercell …

Possible defect structures, arising from the interaction of O 2 molecules with an ideal portion
of the SiC∕ Si O 2 interface, have been investigated systematically using density functional …

We report systematic first-principles calculations that reveal the atomic configurations,
stability, and energy levels of carbon defects in SiC (0001)/SiO 2 systems. We clarify the …

We calculate charge transition levels of various defects at the SiC/SiO 2 interface within a
scheme based on hybrid density functionals, which accurately reproduce the involved band …

A new method of solid-state epitaxy of silicon carbide (SiC) on silicon (Si) is proposed
theoretically and realized experimentally. Films of various polytypes of SiC on Si (111) grow …

We report the observation of a paramagnetic interface defect in thermally oxidized porous n-
type doped 4 HS i C/S i O 2. Based on its axial symmetry and resolved hyperfine interactions …

Density-functional theory combined with periodic boundary conditions is used to
systematically study the dependence of defect formation energy on supercell size for …