When silicon is implanted with a sufficient concentration of H ions, at low to moderate
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers
and fabricate silicon on insulator wafers for the microelectronic industry. The synergy …

Abstract Nanometer-thick multilayered Mo/Si coatings, employed as artificial Bragg
structures, are essential for reflecting specific wavelengths of light in synchrotrons, space …

X-ray diffraction measurements as well as electron (scanning and transmission), optical, and
atomic force microscopies are used to study the thermally induced stress relief mechanisms …

GaSb samples were implanted by 100 keV hydrogen ions (H+) at room temperature with
fluence values of 1× 10 17 and 2× 10 17 ions cm− 2. Post-implantation annealing studies …

To achieve quasi-atomic precision etching of thin film materials in advanced transistors, a
method based on light ion implantation and consisting of two sequential steps—(1) surface …

The underlying physics and the role of H-defect interaction in H ion-induced splitting of GaN
were investigated by transmission electron microscopy, high resolution X-ray diffraction …

The microstructure of ion-implanted crystals is profoundly dictated by mechanical strain
developing in interplay with structural defects. Understanding the origin of strain during the …

The Raman spectra of nanostructures formed on silicon Si single-crystalline wafers by
implantation with hydrogen ions of fluencies ranging within D∼ 2× 1016–3× 1017cm− 2 are …

A hydrogen standard has been carried out by ion implantation in silicon. The silicon wafer
was implanted with hydrogen at different energies and fluences to provide a∼ 100nm flat …