Field emission electron sources in vacuum electronics are largely considered to achieve
faster response, higher efficiency and lower energy consumption in comparison with …

Semiconductor field effect devices (FEDs) have become ubiquitous in everyday life due to
their widespread applications. However, their stability in challenging environments such as …

We report the first observation of a gate-controlled field emission current from a tungsten
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …

Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor
deposition onto SiO2/Si substrates, are exploited to fabricate field‐effect transistors with n …

We report the electrical characterization and field emission properties of MoS 2 bilayers
deposited on a SiO 2/Si substrate. Current–voltage characteristics are measured in the back …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

Electrical characterization of few-layer MoS2-based field-effect transistors with Ti/Au
electrodes is performed in the vacuum chamber of a scanning electron microscope in order …

Nanostructured materials have wide potential applicability as field emitters due to their high
aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and …