GaN is a great material for making optoelectronic devices in the blue, blue-violet and green
bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including …

This first systematic, authoritative and thorough treatment in one comprehensive volume
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …

We report the demonstration of the continuous wave laser action on GaN-based vertical
cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair …

This paper reviews the fabrication technology and performance characteristics of optically
pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers …

A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have
been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular …

We have successfully demonstrated the room-temperature continuous-wave operation of
GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors …

Semiconductor light emitting device and methods for its manufacture comprises a plurality of
textured district defined on the surface of the substrate. The initial inclined layer deposition …

Summary form only given. The InGaN/GaN multiple quantum well (MQW) heterostructure
has become the standard active medium in blue and violet nitride edge-emitting diode …

Preparation of highly reflective distributed Bragg reflectors (DBRs) from III-nitrides is an
important building block for cavity photonics. In this work, we report the fabrication of a …

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and
transferred onto GaAs, Si, and polymer “receptor” substrates using a low-temperature Pd-In …