The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

This article demonstrates a fully integrated broadband four-channel phased array
transceiver, capable of wireless data rates up to 200 Gb/s covering the entire-band (110 …

This article introduces a four-element 300-GHz-band bi-directional phased-array transceiver
(TRX). The TRX utilizes the same antenna, signal path, and local oscillator (LO) circuitry to …

A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT)
power amplifier (PA) for high-speed communication at around 300 GHz is presented. The …

This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss
four-way power combiner. The proposed power combiner consists of an improved zero …

A highly integrated fundamentally operated direct-conversion quadrature (IQ) TX/RX chipset
with a tunable carrier of 215–240 GHz for high-speed wireless communication is presented …

This letter presents a D-band (110 to 170 GHz) transmit-receive module in 0.13-μm silicon-
germanium (SiGe) BiCMOS for phased-array applications. The module includes single-pole …

This work presents a-band (110–170 GHz) receiver (RX) with integrated analog-to-digital
converter (ADC) and phase-locked loop (PLL). The receiver front end (RXFE) consists of a …

This work presents a 300-GHz low-noise amplifier (LNA) in a SiGe: C 130-nm BiCMOS
technology, featuring of 470/700 GHz. The designed amplifier uses three cascaded stages …