Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Hardware implementation of deep network accelerators towards healthcare and biomedical applications

MR Azghadi, C Lammie, JK Eshraghian… - … Circuits and Systems, 2020 - ieeexplore.ieee.org
The advent of dedicated Deep Learning (DL) accelerators and neuromorphic processors
has brought on new opportunities for applying both Deep and Spiking Neural Network …

VTEAM: A general model for voltage-controlled memristors

S Kvatinsky, M Ramadan, EG Friedman… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Memristors are novel electrical devices used for a variety of applications, including memory,
logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their …

Comprehensive model of electron conduction in oxide-based memristive devices

C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Logic design within memristive memories using memristor-aided loGIC (MAGIC)

N Talati, S Gupta, P Mane… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Realizing logic operations within passive crossbar memory arrays is a promising approach
to enable novel computer architectures, different from conventional von Neumann …

Investigation of the impact of high temperatures on the switching kinetics of redox‐based resistive switching cells using a high‐speed nanoheater

M von Witzleben, K Fleck, C Funck… - Advanced Electronic …, 2017 - Wiley Online Library
Ionic transport greatly influences the switching kinetics of filamentary resistive switching
memories and depends strongly on temperature and electric fields. To separate the impact …

Neuromorphic vision hybrid RRAM-CMOS architecture

JK Eshraghian, K Cho, C Zheng, M Nam… - … Transactions on Very …, 2018 - ieeexplore.ieee.org
The development of a bioinspired image sensor, which can match the functionality of the
vertebrate retina, has provided new opportunities for vision systems and processing through …

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x∼ 1

CMM Rosário, B Thöner, A Schönhals, S Menzel… - Nanoscale, 2019 - pubs.rsc.org
The resistive switching in metal–oxide thin films typically occurs via modulation of the
oxygen content in nano-sized conductive filaments. For Ta2O5-based resistive switching …

Thermometry of filamentary RRAM devices

E Yalon, AA Sharma, M Skowronski… - … on Electron Devices, 2015 - ieeexplore.ieee.org
Since thermal effects play a major role in filamentary RRAM devices, we compare the two
localized thermometry methods developed for such devices. One method is based on short …

IMPLY-based high-speed conditional carry and carry select adders for in-memory computing

N Kaushik, S Bodapati - IEEE Transactions on Nanotechnology, 2023 - ieeexplore.ieee.org
Big data applications involved with neural networks requires frequent data transfer between
memory and processing elements and thus, take a significant portion of energy. One …