Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Hardware implementation of deep network accelerators towards healthcare and biomedical applications
The advent of dedicated Deep Learning (DL) accelerators and neuromorphic processors
has brought on new opportunities for applying both Deep and Spiking Neural Network …
has brought on new opportunities for applying both Deep and Spiking Neural Network …
VTEAM: A general model for voltage-controlled memristors
S Kvatinsky, M Ramadan, EG Friedman… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Memristors are novel electrical devices used for a variety of applications, including memory,
logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their …
logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their …
Comprehensive model of electron conduction in oxide-based memristive devices
C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
Logic design within memristive memories using memristor-aided loGIC (MAGIC)
Realizing logic operations within passive crossbar memory arrays is a promising approach
to enable novel computer architectures, different from conventional von Neumann …
to enable novel computer architectures, different from conventional von Neumann …
Investigation of the impact of high temperatures on the switching kinetics of redox‐based resistive switching cells using a high‐speed nanoheater
M von Witzleben, K Fleck, C Funck… - Advanced Electronic …, 2017 - Wiley Online Library
Ionic transport greatly influences the switching kinetics of filamentary resistive switching
memories and depends strongly on temperature and electric fields. To separate the impact …
memories and depends strongly on temperature and electric fields. To separate the impact …
Neuromorphic vision hybrid RRAM-CMOS architecture
JK Eshraghian, K Cho, C Zheng, M Nam… - … Transactions on Very …, 2018 - ieeexplore.ieee.org
The development of a bioinspired image sensor, which can match the functionality of the
vertebrate retina, has provided new opportunities for vision systems and processing through …
vertebrate retina, has provided new opportunities for vision systems and processing through …
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x∼ 1
CMM Rosário, B Thöner, A Schönhals, S Menzel… - Nanoscale, 2019 - pubs.rsc.org
The resistive switching in metal–oxide thin films typically occurs via modulation of the
oxygen content in nano-sized conductive filaments. For Ta2O5-based resistive switching …
oxygen content in nano-sized conductive filaments. For Ta2O5-based resistive switching …
Thermometry of filamentary RRAM devices
Since thermal effects play a major role in filamentary RRAM devices, we compare the two
localized thermometry methods developed for such devices. One method is based on short …
localized thermometry methods developed for such devices. One method is based on short …
IMPLY-based high-speed conditional carry and carry select adders for in-memory computing
N Kaushik, S Bodapati - IEEE Transactions on Nanotechnology, 2023 - ieeexplore.ieee.org
Big data applications involved with neural networks requires frequent data transfer between
memory and processing elements and thus, take a significant portion of energy. One …
memory and processing elements and thus, take a significant portion of energy. One …