Odyssey of the charge pumping technique and its applications from micrometric-to atomic-scale era

B Djezzar - Journal of Applied Physics, 2023 - pubs.aip.org
This paper reviews the evolution of the charge pumping (CP) technique and its applications
from the micrometer-scale to the atomic-scale device era. We describe the more significant …

Self-heating and reliability-aware “intrinsic” safe operating Area of wide bandgap semiconductors—an analytical approach

BK Mahajan, YP Chen, N Zagni… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The emergence of several technology options and the ever-broadening range of
applications (eg, automotive, smart grids, solar/wind farms) for power electronic devices …

A critical examination of the TCAD modeling of hot carrier degradation for LDMOS transistors

BK Mahajan, YP Chen, MA Alam… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
LDMOS is one of the most widely used power transistors and has a variety of applications
across multiple sectors (automobile, photovoltaics, communication, etc.). Unfortunately, the …

An analytical model of hot carrier degradation in LDMOS transistors: Rediscovery of universal scaling

BK Mahajan, YP Chen, MA Alam - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
It is well-known that regardless of the voltage/temperature/device structure, the hot carrier
degradation (HCD) of classical logic transistors scales onto a single universal curve, offering …

Correlated effects of radiation and hot carrier degradation on the performance of LDMOS transistors

BK Mahajan, YP Chen, UAH Rivera… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Over the past few decades, power electronics devices have found numerous applications,
including high energy physics, drones, space electronics, etc. It is well-known that the …

Total Ionizing Dose Effects on the Performance and Hot Carrier Degradation of LDMOS Transistors

BK Mahajan, YP Chen, MAZ Mamun… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Lateral double diffused MOS (LDMOS) transistors have found numerous applications as
radio-frequency and power amplifiers in a variety of systems, including satellite …

Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application

R Ye, J Bian, H Luo, Q Kang, S Liu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) technologies based on the 0.18-m
process node are popular for automotive applications due to their superior features. In the …

Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology

WC Hung, YF Tu, TC Chang, MC Tai… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, the issue of abnormal two-stage hot carrier injection (HCI) degradation in n-type
lateral double-diffused MOS (LDMOS) transistors is explored. The degradation mechanism …

Reliability Characterization and Modeling for High Voltage Ldmos Devices

C Miao - 2022 - search.proquest.com
This research is focused on the reliability characterization and modeling for high voltage
(HV) power devices such as lateral double-diffusion MOSFET (LDMOS) and extended-drain …