Ferromagnetic resonance in Ga1− xMnxAs dilute magnetic semiconductors
X Liu, JK Furdyna - Journal of Physics: Condensed Matter, 2006 - iopscience.iop.org
We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …
Disorder effects in diluted magnetic semiconductors
C Timm - Journal of Physics: Condensed Matter, 2003 - iopscience.iop.org
In recent years, disorder has been shown to be crucial for the understanding of diluted
magnetic semiconductors. Effects of disorder in these materials are reviewed with the …
magnetic semiconductors. Effects of disorder in these materials are reviewed with the …
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides
YC Cheng, QY Zhang, U Schwingenschlögl - Physical Review B, 2014 - APS
We demonstrate that valley polarization can be induced and controlled in semiconducting
single-layer transition-metal dichalcogenides by magnetic doping, which is important for …
single-layer transition-metal dichalcogenides by magnetic doping, which is important for …
Long-range ferromagnetic ordering in manganese-doped two-dimensional dichalcogenides
We report an investigation of long-range ferromagnetic (FM) ordering in Mn-doped MoS 2,
MoSe 2, MoTe 2, and WS 2 for Mn concentration less than 5% using density functional …
MoSe 2, MoTe 2, and WS 2 for Mn concentration less than 5% using density functional …
Half-metallic ferromagnetism: Example of CrO2
JMD Coey, M Venkatesan - Journal of Applied Physics, 2002 - pubs.aip.org
A broad classification scheme is proposed for half-metallic ferromagnets which embraces
the possibilities of itinerant and localized electrons, as well as semimetallic and …
the possibilities of itinerant and localized electrons, as well as semimetallic and …
Magnetic properties and diffusion of adatoms on a graphene sheet
PO Lehtinen, AS Foster, A Ayuela, A Krasheninnikov… - Physical review …, 2003 - APS
We use ab initio methods to calculate the properties of adatom defects on a graphite surface.
By applying a full spin-polarized description to the system we demonstrate that these defects …
By applying a full spin-polarized description to the system we demonstrate that these defects …
Exchange interactions in III-V and group-IV diluted magnetic semiconductors
Effective pair exchange interactions between Mn atoms in III-V and group-IV diluted
magnetic semiconductors are determined from a two-step first-principles procedure. In the …
magnetic semiconductors are determined from a two-step first-principles procedure. In the …
Magnetic interactions in transition-metal-doped ZnO: An ab initio study
P Gopal, NA Spaldin - Physical Review B—Condensed Matter and Materials …, 2006 - APS
We calculate the nature of magnetic interactions in transition-metal doped ZnO using the
local spin density approximation and (LSDA) the LSDA+ U (Coulomb interaction) method of …
local spin density approximation and (LSDA) the LSDA+ U (Coulomb interaction) method of …
Temperature-dependent magnetization in diluted magnetic semiconductors
We calculate magnetization in magnetically doped semiconductors assuming a local
exchange model of carrier-mediated ferromagnetic mechanism and using a number of …
exchange model of carrier-mediated ferromagnetic mechanism and using a number of …
Magnetism in polycrystalline cobalt-substituted zinc oxide
AS Risbud, NA Spaldin, ZQ Chen, S Stemmer… - Physical Review B, 2003 - APS
We present results of the preparation (by precursor decomposition), characterization (with x-
ray diffraction, transmission electron microscopy, and dc magnetization measurements), and …
ray diffraction, transmission electron microscopy, and dc magnetization measurements), and …