The impact of band bending on the thermal behaviour of gain in Type-II GaAs-based “W”-lasers

DA Duffy, IP Marko, C Fuchs, W Stolz… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
We undertake a comprehensive investigation of the temperature (T) and injection
dependence of the modal gain in 1240 nm-emitting Type-II (GaIn) As/Ga (AsSb)/(GaIn) As …