An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …

Physical vapor deposition (PVD) is a thin film fabrication process in the semiconductor
industry. This review paper discusses the different types of PVD methods such as sputtering …

In this study, Gallium oxide (Ga 2 O 3) thin films were deposited by vacuum thermal
evaporation technique. The effects of annealing temperature on the structural, optical and …

Nanocrystalline yttrium oxide (Y2O3) thin films were made by sputter deposition onto silicon
(100) substrates keeping the deposition temperature fixed at 300° C. The surface/interface …

Nanocrystalline and amorphous Ga2O3 films (≈ 200 nm) with variable structural quality are
produced by sputter‐deposition by varying the substrate temperature (Ts= 25–700° C). The …

A facile, green and easily scalable method has been developed to facilitate the construction
of 2D-C 3 N 4/3D-CeO 2 heterojunction materials. It uses only cheap urea and ceria in a …

Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …

Growth of 150 nm Sm 2 O 3 films by sputtered pure samarium metal film on silicon
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …

Influence of growth temperature on structure, optical and electrical properties of nickel oxide
films by magnetron sputtering - NASA/ADS Now on home page ads icon ads Enable full ADS …

The optical, electrical and corrosion resistance properties of thin layers of zirconium
oxynitride are directly related to their structure and chemical composition. In the present …