Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Review and analysis of SiC MOSFETs' ruggedness and reliability
J Wang, X Jiang - IET Power Electronics, 2020 - Wiley Online Library
SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
Review on the reliability mechanisms of SiC power MOSFETs: A comparison between planar-gate and trench-gate structures
J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun… - … on Power Electronics, 2023 - ieeexplore.ieee.org
To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
Investigation on single pulse avalanche failure of 1200-V SiC MOSFETs via optimized thermoelectric simulation
Z Bai, X Tang, S Xie, Y He, H Yuan… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped …
A temperature-dependent SPICE model of SiC power MOSFETs for within and out-of-SOA simulations
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …
model describes the static and dynamic behavior and accounts for leakage current and …
Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks
In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
Radiation-induced degradation of silicon carbide MOSFETs–A review
T Baba, NA Siddiqui, NB Saidin, SHM Yusoff… - Materials Science and …, 2024 - Elsevier
Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
Analysis of current capability of SiC power MOSFETs under avalanche conditions
S Nida, B Kakarla, T Ziemann… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The phenomenon of reduced energy capability of power metal-oxide-semiconductor field-
effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV …
effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV …