A review on ternary CuFeS2 compound: Fabrication strategies and applications
This review gives an overview on CuFeS 2 (CFS) compound. These materials belong to
transition metal chalcogenides (TMC), which can be obtained in different forms like single …
transition metal chalcogenides (TMC), which can be obtained in different forms like single …
Exploring the formation of InAs (Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions
The effect of a Bi supply on the development of InAs/GaAs (0 0 1) QDs has been structurally
explored in two growth temperature regimes, one for Bi alloying (380° C) and another for …
explored in two growth temperature regimes, one for Bi alloying (380° C) and another for …
Bismuth surfactant-enhanced III-As epitaxy on GaAs (111) A
AM Hassanen, J Herranz, L Geelhaar… - Semiconductor …, 2023 - iopscience.iop.org
Quantum dot (QD) growth on high ($ c_ {3v} $) symmetry GaAs {111} surfaces holds promise
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …
Phase Control Growth of InAs Nanowires by Using Bi Surfactant
S Saleem, A Maryam, K Fatima, H Noor, F Javed… - Coatings, 2022 - mdpi.com
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to
control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that …
control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that …
Epitaxial Growth of Semiconductor Quantum Dots: An Overview.
H Liu - Journal of Molecular & Engineering Materials, 2023 - search.ebscohost.com
Quantum dots (QDs) play an important role in fabricating electronic, photonic, and
optoelectronic devices with enhanced functions and performance. There are two typical …
optoelectronic devices with enhanced functions and performance. There are two typical …
In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy
IP Kazakov - Bulletin of the Lebedev Physics Institute, 2024 - Springer
Abstract The formation of InGaAs/GaAs quantum dots by molecular beam epitaxy is studied
under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs …
under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs …
[PDF][PDF] Phase Control Growth of InAs Nanowires by Using Bi Surfactant. Coatings 2022, 12, 250
S Saleem, A Maryam, K Fatima, H Noor, F Javed… - 2022 - academia.edu
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to
control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that …
control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that …