Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular
interest for magnetic random-access memories because of their excellent thermal stability …

Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …

The need for high-density, higher-speed memory devices has increased tremendously over
the last decade. With scaling and integration capacity of traditional memories reaching its …

For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was
successfully demonstrated through the tight distributions for resistance and magnetic …

We demonstrate an SoC logic compatible ferroelectric-metal field effect transistor (FeMFET)
digital 2-bit weight cell by monolithic BEOL integration of a ferroelectric (FE) capacitor with …

Binary stochastic neurons (BSNs) form an integral part of many machine learning
algorithms, motivating the development of hardware accelerators for this complex function. It …

Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-
access memory are by far the only known solid-state memory element that can realize a …

Deep neural network (DNN) inference tasks have become ubiquitous workloads on mobile
SoCs and demand energy-efficient hardware accelerators. Mobile DNN accelerators are …

High-quality random numbers are very critical to many fields such as cryptography, finance,
and scientific simulation, which calls for the design of reliable true random number …