van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics
Earth-abundant semiconducting materials are a potential solution for large-scale
deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth …
deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth …
Colloidal Synthesis of P‐Type Zn3As2 Nanocrystals
Abstract Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic
applications owing to their intrinsic p‐type behavior and appropriate bandgaps. However …
applications owing to their intrinsic p‐type behavior and appropriate bandgaps. However …
Regaining a spatial dimension: Mechanically transferrable two-dimensional inas nanofins grown by selective area epitaxy
We report a method for growing rectangular InAs nanofins with deterministic length, width,
and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can …
and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can …
Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide
Semiconductors made of earth-abundant elements, such as zinc phosphide, have the
potential to substitute less abundant, highly functional compound semiconductors such as …
potential to substitute less abundant, highly functional compound semiconductors such as …
Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber
Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral
range relevant for single junction photovoltaic applications. It is made of elements abundant …
range relevant for single junction photovoltaic applications. It is made of elements abundant …
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
We report on the postgrowth shaping of free-standing two-dimensional (2D) InAs nanofins
that are grown by selective-area epitaxy and mechanically transferred to a separate …
that are grown by selective-area epitaxy and mechanically transferred to a separate …
Vibrational modes and crystallographic structure of Cd3As2 and (Cd1-x Zn x) 3As2 epilayers
B Fluegel, AD Rice, K Alberi - Journal of Physics D: Applied …, 2022 - iopscience.iop.org
Low-temperature Raman scattering is used to study the crystal structure of molecular-beam
epitaxially grown layers of the Dirac semimetal Cd 3 As 2 and its related alloy (Cd 1-x Zn x) 3 …
epitaxially grown layers of the Dirac semimetal Cd 3 As 2 and its related alloy (Cd 1-x Zn x) 3 …
Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting
SR Escobar Steinvall - 2020 - infoscience.epfl.ch
Abstract Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant
elements with functional properties ideal for solar cell applications. Cheap, abundant, and …
elements with functional properties ideal for solar cell applications. Cheap, abundant, and …
Synthesis and magnetic properties of solid solutions of a diluted magnetic semiconductor (Zn1-xFex) 3As2
VS Zakhvalinskii, TB Nikulicheva… - IOP Conference …, 2021 - iopscience.iop.org
The magnetic properties of the new semimagnetic semiconductor (Zn 1-x Fe x) 3 As 2 with
x< 0.04 have been investigated over a wide temperature range. Single crystals of ZFA were …
x< 0.04 have been investigated over a wide temperature range. Single crystals of ZFA were …