We review the history, development, design principles, experimental operating
characteristics, and specialized architectures of interband cascade lasers for the mid-wave …

We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum
cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with …

In this article, the linear and nonlinear intersubband optical properties of the valence-band
electronic states were theoretically investigated in GaAs/GaAsSb/GaAs parabolic quantum …

InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates
are presented. This material system offers intrinsic performance-improving properties, like a …

We present an optical spectroscopy analysis of the molecular beam epitaxy-grown
InAs/GaSb quantum systems to study the higher-order optical transitions in InAs/GaSb …

A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination
of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be …

GaAsSb based materials have become the promising system for infrared semiconductor
lasers and detectors. In this article, the strain, energy band structures and …

As an important candidate for novel infrared semiconductor lasers, the optical properties of
GaAsSb‐based multiple quantum wells (MQWs) are crucial. The temperature‐and excitation …

This paper reports quantum mechanical study to optimize the type-I AlN/GaN/InAlN QW
(quantum well) heterostructure and investigates the optical gain characteristics. The …

A multi band (particularly, six band) k. p approach has been adopted for modelling the
GaAsSb/InAs/AlSb W-shaped quantum well (QW)-heterostructure (a type-II with broken …