Black silicon: fabrication methods, properties and solar energy applications

X Liu, PR Coxon, M Peters, B Hoex, JM Cole… - Energy & …, 2014 - pubs.rsc.org
Black silicon (BSi) represents a very active research area in renewable energy materials.
The rise of BSi as a focus of study for its fundamental properties and potentially lucrative …

High-efficiency silicon heterojunction solar cells: A review

S De Wolf, A Descoeudres, ZC Holman, C Ballif - green, 2012 - degruyter.com
Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on
crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at …

Current losses at the front of silicon heterojunction solar cells

ZC Holman, A Descoeudres, L Barraud… - IEEE journal of …, 2012 - ieeexplore.ieee.org
The current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous
silicon (a-Si: H) layers at the front of silicon heterojunction solar cells are isolated and …

Silicon surface passivation by atomic layer deposited Al2O3

B Hoex, J Schmidt, P Pohl… - Journal of Applied …, 2008 - pubs.aip.org
Thin Al 2 O 3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …

Nature of doped a-Si: H/c-Si interface recombination

S De Wolf, M Kondo - Journal of Applied Physics, 2009 - pubs.aip.org
Doped hydrogenated amorphous silicon (a-Si: H) films of only a few nanometer thin find
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …

Model for a-Si: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

S Olibet, E Vallat-Sauvain, C Ballif - Physical Review B—Condensed Matter …, 2007 - APS
The performance of many silicon devices is limited by electronic recombination losses at the
crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow …

Abruptness of a-Si: H∕ c-Si interface revealed by carrier lifetime measurements

S De Wolf, M Kondo - Applied Physics Letters, 2007 - pubs.aip.org
Intrinsic hydrogenated amorphous silicon films can yield outstanding electronic surface
passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly …

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

J Schmidt, B Veith, R Brendel - physica status solidi (RRL) …, 2009 - Wiley Online Library
We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline
silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al2O3) films of …

Device physics underlying silicon heterojunction and passivating‐contact solar cells: A topical review

RVK Chavali, S De Wolf… - Progress in Photovoltaics …, 2018 - Wiley Online Library
The device physics of commercially dominant diffused‐junction silicon solar cells is well
understood, allowing sophisticated optimization of this class of devices. Recently, so‐called …

Stretched-exponential a-Si: H∕ c-Si interface recombination decay

S De Wolf, S Olibet, C Ballif - Applied Physics Letters, 2008 - pubs.aip.org
The electronic properties of hydrogenated amorphous silicon (a-Si: H) relax following
stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen …