Black silicon: fabrication methods, properties and solar energy applications
Black silicon (BSi) represents a very active research area in renewable energy materials.
The rise of BSi as a focus of study for its fundamental properties and potentially lucrative …
The rise of BSi as a focus of study for its fundamental properties and potentially lucrative …
High-efficiency silicon heterojunction solar cells: A review
Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on
crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at …
crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at …
Current losses at the front of silicon heterojunction solar cells
ZC Holman, A Descoeudres, L Barraud… - IEEE journal of …, 2012 - ieeexplore.ieee.org
The current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous
silicon (a-Si: H) layers at the front of silicon heterojunction solar cells are isolated and …
silicon (a-Si: H) layers at the front of silicon heterojunction solar cells are isolated and …
Silicon surface passivation by atomic layer deposited Al2O3
Thin Al 2 O 3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …
Nature of doped a-Si: H/c-Si interface recombination
Doped hydrogenated amorphous silicon (a-Si: H) films of only a few nanometer thin find
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …
Model for a-Si: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
S Olibet, E Vallat-Sauvain, C Ballif - Physical Review B—Condensed Matter …, 2007 - APS
The performance of many silicon devices is limited by electronic recombination losses at the
crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow …
crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow …
Abruptness of a-Si: H∕ c-Si interface revealed by carrier lifetime measurements
Intrinsic hydrogenated amorphous silicon films can yield outstanding electronic surface
passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly …
passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly …
Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks
J Schmidt, B Veith, R Brendel - physica status solidi (RRL) …, 2009 - Wiley Online Library
We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline
silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al2O3) films of …
silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al2O3) films of …
Device physics underlying silicon heterojunction and passivating‐contact solar cells: A topical review
RVK Chavali, S De Wolf… - Progress in Photovoltaics …, 2018 - Wiley Online Library
The device physics of commercially dominant diffused‐junction silicon solar cells is well
understood, allowing sophisticated optimization of this class of devices. Recently, so‐called …
understood, allowing sophisticated optimization of this class of devices. Recently, so‐called …
Stretched-exponential a-Si: H∕ c-Si interface recombination decay
The electronic properties of hydrogenated amorphous silicon (a-Si: H) relax following
stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen …
stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen …