Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Lasing in strained germanium microbridges
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …
Lasing in Group-IV materials
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …
data communications, particularly short range. It also is being prospected for applications in …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress
The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …
Mid-infrared light emission> 3 µm wavelength from tensile strained GeSn microdisks
GeSn alloys with Sn contents of 8.4% and 10.7% are grown pseudomorphically on Ge
buffers on Si (001) substrates. The alloys as-grown are compressively strained, and …
buffers on Si (001) substrates. The alloys as-grown are compressively strained, and …
Strain-induced enhancement of electroluminescence from highly strained germanium light-emitting diodes
The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …
efficient light source that is compatible with the complementary metal–oxide–semiconductor …
PIC-integrable high-responsivity germanium waveguide photodetector in the C+ L band
XY Li, YF Liu, R Song, C Li, SX Wang, WC Yue, Z Tu… - Optics …, 2023 - opg.optica.org
We report the demonstration of a germanium waveguide pin photodetector (PD) for the C+ L
band light detection. Tensile strain is transferred into the germanium layer using a SiN …
band light detection. Tensile strain is transferred into the germanium layer using a SiN …
Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications
The creation of CMOS compatible light sources is an important step for the realization of
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …
Interaction of Ge (Si) self-assembled nanoislands with different modes of two-dimensional photonic crystal
MV Stepikhova, SA Dyakov, AV Peretokin, MV Shaleev… - Nanomaterials, 2022 - mdpi.com
The interaction of Ge (Si)/SOI self-assembled nanoislands with modes of photonic crystal
slabs (PCS) with a hexagonal lattice is studied in detail. Appropriate selection of the PCS …
slabs (PCS) with a hexagonal lattice is studied in detail. Appropriate selection of the PCS …