Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications

M Brehm, M Grydlik - Nanotechnology, 2017 - iopscience.iop.org
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Lasing in strained germanium microbridges

FT Armand Pilon, A Lyasota, YM Niquet… - Nature …, 2019 - nature.com
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Lasing in Group-IV materials

V Reboud, D Buca, H Sigg, JM Hartmann… - Silicon Photonics IV …, 2021 - Springer
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Germanium based photonic components toward a full silicon/germanium photonic platform

V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress

A Gassenq, S Tardif, K Guilloy, I Duchemin… - Journal of Applied …, 2017 - pubs.aip.org
The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …

Mid-infrared light emission> 3 µm wavelength from tensile strained GeSn microdisks

RW Millar, DCS Dumas, KF Gallacher, P Jahandar… - Optics express, 2017 - opg.optica.org
GeSn alloys with Sn contents of 8.4% and 10.7% are grown pseudomorphically on Ge
buffers on Si (001) substrates. The alloys as-grown are compressively strained, and …

Strain-induced enhancement of electroluminescence from highly strained germanium light-emitting diodes

J Jiang, M Xue, CY Lu, CS Fenrich, M Morea… - ACS …, 2019 - ACS Publications
The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …

PIC-integrable high-responsivity germanium waveguide photodetector in the C+ L band

XY Li, YF Liu, R Song, C Li, SX Wang, WC Yue, Z Tu… - Optics …, 2023 - opg.optica.org
We report the demonstration of a germanium waveguide pin photodetector (PD) for the C+ L
band light detection. Tensile strain is transferred into the germanium layer using a SiN …

Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications

Y Jung, Y Kim, D Burt, HJ Joo, DH Kang, M Luo… - Optics …, 2021 - opg.optica.org
The creation of CMOS compatible light sources is an important step for the realization of
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …

Interaction of Ge (Si) self-assembled nanoislands with different modes of two-dimensional photonic crystal

MV Stepikhova, SA Dyakov, AV Peretokin, MV Shaleev… - Nanomaterials, 2022 - mdpi.com
The interaction of Ge (Si)/SOI self-assembled nanoislands with modes of photonic crystal
slabs (PCS) with a hexagonal lattice is studied in detail. Appropriate selection of the PCS …