Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Spin-orbit-torque-based devices, circuits and architectures

F Moradi, H Farkhani, B Zeinali, H Ghanatian… - arXiv preprint arXiv …, 2019 - arxiv.org
Spintronics, the use of spin of an electron instead of its charge, has received huge attention
from research communities for different applications including memory, interconnects, logic …

Verilog-A-based analytical modeling of vortex spin-torque nano oscillator

S Shreya, Y Rezaeiyan, A Jenkins… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Topological spin textures are the next-generation spintronic building blocks for storing and
processing information because of their controllable formation and annihilation. Memory …

A low-power high-speed spintronics-based neuromorphic computing system using real-time tracking method

H Farkhani, M Tohidi, S Farkhani… - IEEE Journal on …, 2018 - ieeexplore.ieee.org
In spintronic-based neuromorphic computing systems (NCSs), the switching of magnetic
moment in a magnetic tunnel junction (MTJ) is used to mimic neuron firing. However, the …

Progressive scaled STT-RAM for approximate computing in multimedia applications

B Zeinali, D Karsinos, F Moradi - IEEE Transactions on Circuits …, 2017 - ieeexplore.ieee.org
Spintronic memories are one of the most promising candidates as a universal memory.
Although they offer superior energy efficiency over the conventional memories, benefiting …

[HTML][HTML] A novel self write-terminated driver for hybrid STT-MTJ/CMOS LIM structure

P Barla, VK Joshi, S Bhat - Ain Shams Engineering Journal, 2021 - Elsevier
A novel self write-terminated driver is proposed for the hybrid spin transfer torque-magnetic
tunnel junction (STT-MTJ)/CMOS circuits based on logic-in-memory (LIM) structure. Using …

EXTENT: Enabling approximation-oriented energy efficient STT-RAM write circuit

S Seyedfaraji, JT Daryani, MMS Aly, S Rehman - IEEE Access, 2022 - ieeexplore.ieee.org
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its
various characteristics such as non-volatility, low leakage power, high density. Its magnetic …

Energy efficient write verify and retry scheme for MTJ based flip-flop and application

K Usami, J Akaike, S Akiba, M Kudo… - 2018 IEEE 7th Non …, 2018 - ieeexplore.ieee.org
A non-volatile flip-flop (NVFF) introducing MTJ has many strong points in high endurance
and read/write performance, and hence is very attractive as a component to be used for …

Forming free and ultralow-power erase operation in atomically crystal TiO2 resistive switching

Y Dai, W Bao, L Hu, C Liu, X Yan, L Chen, Q Sun… - 2D …, 2017 - iopscience.iop.org
Two-dimensional layered materials (2DLMs) have attracted broad interest from fundamental
sciences to industrial applications. Their applications in memory devices have been …

Energy-efficient spintronic-based neuromorphic computing system using current mode track and termination circuit

P Shafaghi, M Dolatshahi… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Spintronic nano-devices have shown great potential to reduce the energy consumption of
neuromorphic computing systems (NCSs). In the spintronic-based NCSs, the switching or …