At each advanced technology node, it is crucial to characterize and understand the
mechanisms affecting performance and reliability. Scaling for all nodes prior to the 5-nm …

Static random access memories (SRAMs) are prone to a single-event upset (SEU), also
known as soft errors, due to transient noise caused by a single strike of radiation. Beam …

Scaling trends in the alpha-particle and neutron induced SRAM SER shows an increase in
the per-bit SER and percent multi-cell upsets at the 5-nm FinFET process compared to the 7 …

Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after
fabrication and further across time. Mechanisms of postfabrication variations include total …

In this work, single-event upset (SEU) responses of D flip-flop (FF) designs with different
threshold-voltage options in a 7-nm bulk FinFET technology are examined. Experimental …

As Neural Processing Units (NPU) or accelerators are increasingly deployed in a variety of
applications including safety critical applications such as autonomous vehicle, and medical …

Dynamic voltage scaling (DVS) can be used to reduce the power consumption of onboard
systems by dynamically lowering the bias voltage of volatile static random access memory …

Characterizing the sensitivity of a static random access memory (SRAM) to single-event
upset (SEU) is an essential task for assuring its soft-error reliability. However, this task often …

抗辐射电子学是一门交叉性, 综合性的学科, 其研究的辐射效应规律, 损伤作用机制,
加固设计方法, 试验测试方法, 建模仿真方法等对极端恶劣环境中的电子系统的可靠工作至关 …

Abstract Three-dimensional (3D) TCAD simulations demonstrate that reducing the distance
between the well boundary and N-channel metal–oxide semiconductor (NMOS) transistor or …