Quantum effects in the thermoelectric power factor of low-dimensional semiconductors
We theoretically investigate the interplay between the confinement length L and the thermal
de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting …
de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting …
Thermoelectric properties of ultrathin silicon nanowires
We calculate the room-temperature thermoelectric properties of highly doped ultrathin
silicon nanowires (SiNW) of square cross section (3× 3 to 8× 8 nm 2) by solving the …
silicon nanowires (SiNW) of square cross section (3× 3 to 8× 8 nm 2) by solving the …
Deformation potentials and electron− phonon coupling in silicon nanowires
The role of reduced dimensionality and of the surface on electron− phonon (e-ph) coupling
in silicon nanowires is determined from first principles. Surface termination and chemistry is …
in silicon nanowires is determined from first principles. Surface termination and chemistry is …
Electronic properties and orientation-dependent performance of InAs nanowire transistors
The electronic properties, namely, the band structures, the band gaps, and the electron
effective masses of hydrogen-passivated InAs nanowires grown in< 100>,< 110>, and< …
effective masses of hydrogen-passivated InAs nanowires grown in< 100>,< 110>, and< …
Atomistic deconstruction of current flow in graphene based hetero-junctions
We describe the numerical modeling of current flow in graphene heterojunctions, within the
Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing ak …
Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing ak …
Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications
We present a theoretical framework for the calculation of charge transport through nanowire-
based Schottky-barrier field-effect transistors that is conceptually simple but still captures the …
based Schottky-barrier field-effect transistors that is conceptually simple but still captures the …
Quantum confinement and the diffusivity mobility ratio
S Debbarma, KP Ghatak - Reviews in Theoretical Science, 2015 - ingentaconnect.com
In this paper, we study the effect of quantization on the diffusivity-mobility ratio (DMR) in
nonlinear optical, III–V, ternary, quaternary, II–VI, Bi, IV–VI, stressed, Te, GaP, PtSb2 …
nonlinear optical, III–V, ternary, quaternary, II–VI, Bi, IV–VI, stressed, Te, GaP, PtSb2 …
High-k spacer consideration of ultrascaled gate-all-around junctionless transistor in ballistic regime
Y Yang, H Lou, X Lin - IEEE Transactions on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we investigate the impact of spacer dielectrics on the ultrascaled silicon gate-
all-around junctionless transistor in the ballistic regime based on the in-house 3-D quantum …
all-around junctionless transistor in the ballistic regime based on the in-house 3-D quantum …
[PDF][PDF] Thermoelectric properties of ultrascaled silicon nanowires
EB Ramayya - 2010 - Citeseer
1.5 History of thermoelectric figure of merit, ZT, at 300 K. Since the discovery of the
thermoelectric properties of Bi2Te3 and its alloys with Sb and Se in the 1950s, no bulk …
thermoelectric properties of Bi2Te3 and its alloys with Sb and Se in the 1950s, no bulk …
Effects of phonon scattering on the performance of silicon nanowire transistors
The effects of phonon scattering on the drain current and performance metrics of a silicon
nanowire transistor are studied using a top of the barrier model. When the top of the channel …
nanowire transistor are studied using a top of the barrier model. When the top of the channel …