SiN used as a Stressor in Germanium-On-Insulator Substrate

S Duangchan, K Yamamoto, D Wang… - 2019 International …, 2019 - ieeexplore.ieee.org
This research aims to show the advantage of using silicon nitride as a stressor in a strained
germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface …