Effect of gate engineering in double-gate MOSFETs for analog/RF applications
This work uncovers the potential benefit of fully-depleted short-channel triple-material
double-gate (TM-DG) SOI MOSFET in the context of RF and analog performance …
double-gate (TM-DG) SOI MOSFET in the context of RF and analog performance …
A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling
In this work, an analytical model is developed for DM-DG-TMD-FET-based Biosensor
including Fringing-field effects. The Analytical model has been developed for two different …
including Fringing-field effects. The Analytical model has been developed for two different …
Influence of gate and channel engineering on multigate MOSFETs-A review
R Ramesh - Microelectronics journal, 2017 - Elsevier
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …
as device modeling faces new challenges such as short channel effects and mobility …
Performance analysis of gate-stack dual-material DG MOSFET using work-function modulation technique for lower technology nodes
Short channel effects (SCEs) along with mobility degradation has a great impact on CMOS
technology below 100 nm. These effects can be overcome by using gate and channel …
technology below 100 nm. These effects can be overcome by using gate and channel …
Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
VM Srivastava, KS Yadav, G Singh - Microelectronics Journal, 2011 - Elsevier
In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …
A novel barrier controlled tunnel FET
A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed
of three segments of different work functions. The tunnel current is controlled by an in …
of three segments of different work functions. The tunnel current is controlled by an in …
Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
VM Srivastava, KS Yadav, G Singh - Microelectronics Journal, 2011 - Elsevier
In this paper, we have designed a double-gate MOSFET and compared its performance
parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole …
parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole …
Influence of threshold voltage performance analysis on dual halo gate stacked triple material dual gate TFET for ultra low power applications
M Venkatesh, NB Balamurugan - Silicon, 2021 - Springer
In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel
engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual …
engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual …
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): introduction to a BG-HJ-STEFT based …
This manuscript reports the back-gate effects on device-level performance of a
heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …
heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …
New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
M Venkatesh, NB Balamurugan - Superlattices and Microstructures, 2019 - Elsevier
An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate
stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is …
stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is …