Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
[HTML][HTML] High responsivity tin gallium oxide Schottky ultraviolet photodetectors
P Mukhopadhyay, WV Schoenfeld - Journal of Vacuum Science & …, 2020 - pubs.aip.org
The authors report on high spectral responsivity (Sn x Ga 1− x) 2 O 3 Schottky UV
photodetectors grown by plasma-assisted molecular beam epitaxy on β-Ga 2 O 3 substrates …
photodetectors grown by plasma-assisted molecular beam epitaxy on β-Ga 2 O 3 substrates …
Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy
P Mukhopadhyay, WV Schoenfeld - Applied Optics, 2019 - opg.optica.org
We report on tin gallium oxide ((Sn_xGa_1− x) _2O_3) solar-blind metal–semiconductor–
metal (MSM) photodetectors grown by plasma-assisted molecular beam epitaxy on c-plane …
metal (MSM) photodetectors grown by plasma-assisted molecular beam epitaxy on c-plane …
High Detectivity of Metal–Semiconductor–Metal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
Z Zheng, B Qiao, Z Zhang, X Huang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Detectivity is the most key parameter in weak-signal photodetection, which depends on high
photoresponse and low noise simultaneously. In this work, metal–semiconductor–metal …
photoresponse and low noise simultaneously. In this work, metal–semiconductor–metal …
High figure‐of‐merit gallium oxide UV photodetector on silicon by molecular beam epitaxy: a path toward monolithic integration
P Mukhopadhyay, I Hatipoglu… - Advanced Photonics …, 2021 - Wiley Online Library
A high figure‐of‐merit UV‐C solar‐blind photodetector (PD) fabricated from thin‐film beta‐
gallium oxide (β‐Ga2O3) grown on n‐Si substrates by plasma‐assisted molecular beam …
gallium oxide (β‐Ga2O3) grown on n‐Si substrates by plasma‐assisted molecular beam …
[HTML][HTML] Effects of ytterbium doping on the ultraviolet emissions of MgZnO films prepared by magnetron sputtering
CL Heng, XL Li, X Wang, WY Su, TG Finstad - Journal of Alloys and …, 2024 - Elsevier
In this work, we studied the effects of rare earth ytterbium (Yb) doping on the structure and
ultraviolet (UV) emission properties of MgZnO films deposited by magnetron sputtering and …
ultraviolet (UV) emission properties of MgZnO films deposited by magnetron sputtering and …
Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering
DC Tsai, FK Chen, ZC Chang, BH Kuo, EC Chen… - Applied Physics A, 2021 - Springer
A systematic study of the effect of Al2O3 doping concentration in targets on the structure and
optoelectronic characteristics of sputtered MgZnO films was conducted. The films were …
optoelectronic characteristics of sputtered MgZnO films was conducted. The films were …
Ultraviolet Solar Blind Ga2O3-Based Photodetectors
I Hatipoglu - 2021 - stars.library.ucf.edu
Detection within the deep ultraviolet (DUV) region (200-280 nm) offers unique fundamental
advantages to probe certain optical traces. Therefore, many applications have emerged …
advantages to probe certain optical traces. Therefore, many applications have emerged …
[引用][C] High Figure-of-Merit Gallium Oxide UV Photodetector on Silicon by MBE: A Path Towards Monolithic Integration
P Mukhopadhyay, I Hatipoglu, TS Sakthivel, DA Hunter…