This review summarizes the catalytic-thermal decomposition studies present for
tetrafluoromethane (CF 4, R-14). CF 4 possesses a GWP of 6,630 and has a lifetime of …

Y 2 O 3 coatings during atmospheric plasma spray (APS) processes are used to suppress
the corrosion of internal process chamber parts for semiconductor plasma etching. Highly …

This study focuses on the numerical modelling of the decomposition process of carbon
tetrafluoride (CF 4, Freon R-14), the most stable perfluorinated gas with a significant global …

Ar/CF 4 discharge plasma etching is a promising approach to achieving a high etch rate and
anisotropic etching. A 1D fluid model is established to numerically study the effects of CF 4 …

CF4, one of the Perfluorocompounds (PFCs), also known as a greenhouse gas with high
global warming potential. In this study, Zr/γ-Al2O3 catalysts were developed for CF4 …

A hybrid plasma model is utilized for the simulation of inductively coupled plasmas (ICPs). It
consists of a plasma fluid model coupling fluid with Maxwell's equations and a Monte Carlo …

O 2 impurity in the working gas of an He/CF 4 atmospheric pressure plasma jet (APPJ) can
affect the discharge dynamics and the density of reactive species. Therefore, a two …

The precise monitoring of chemical reactions in plasma-based processes is crucial for
advanced semiconductor manufacturing. This study integrates three diagnostic techniques …

Plasma etching continues to play a central role in microelectronics manufacturing. As the
semiconductor industry continues to shrink critical feature sizes and improves device …

The semiconductor industry increasingly relies on high aspect ratio etching facilitated by
Amorphous Carbon Layer (ACL) masks for advanced 3D-NAND and DRAM technologies …