The nano ribbon FET (NR-FET) is an emerging device as multigate structure can be
designed on a single substrate, which leads to improvement in device performance …

To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …

For the first time, a novel source extension heterojunction gate‐all‐around tunnel FET (SE‐
GAA‐TFET) is proposed and examined using Synopsys TCAD simulator in this manuscript …

In this article, a dopingless TFET with dual-drain and reversed T-shaped channel (DLVIT-
TFET) is investigated to offer improvement in ON-state current (I On) along with the reduction …

In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based
photosensor is designed to offer improvement in optical performance for detecting incident …

This manuscript presents a comparative biosensing analysis of a dielectrically modulated
dual-drain vertical TFET (DD-VTFET) by considering three distinct device arrangements …

This work investigates into the potential application of an improved N+ pocket Vertical
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …

In this paper, an optically gated vertical tunnel field-effect transistor (OG-VTFET) based
photodetector with different gate oxides is investigated to detect incident light with narrow …

This paper presents a thorough analysis on analog/RF parameters including interface trap
charges (ITCs) of two different densities of states (DOS) along with self-heating on the …

To address the low ON-current and reliability issues of dopant-free TFETs, we have
incorporated a metal-layer near the source/channel (S/C) interface. The use of this metal …