Low-dimensional wide-bandgap semiconductors for UV photodetectors
Z Li, T Yan, X Fang - Nature Reviews Materials, 2023 - nature.com
Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
Hexagonal boron nitride for next‐generation photonics and electronics
S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …
tremendous interest motivated by the extraordinary properties it shows across the fields of …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
MA Khan, N Maeda, J Yun, M Jo, Y Yamada… - Scientific reports, 2022 - nature.com
Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN)
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
Environmental effects of ozone depletion, UV radiation and interactions with climate change: UNEP Environmental Effects Assessment Panel, update 2017
AF Bais, RM Lucas, JF Bornman… - Photochemical & …, 2018 - pubs.rsc.org
The Environmental Effects Assessment Panel (EEAP) is one of three Panels of experts that
inform the Parties to the Montreal Protocol. The EEAP focuses on the effects of UV radiation …
inform the Parties to the Montreal Protocol. The EEAP focuses on the effects of UV radiation …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …