Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold
It is crucial to fabricate nano photonic devices such as nanolasers in order to meet the
requirements for the integration of photonic and electronic circuits on the nanometre scale …
requirements for the integration of photonic and electronic circuits on the nanometre scale …
Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature
L Srinivasan, C Jadaud, F Silva, JC Vanel… - Journal of Vacuum …, 2023 - pubs.aip.org
We report on the successful growth of polycrystalline GaN thin films on Si (100) substrates at
room temperature (without intentional heating) using radiofrequency reactive magnetron …
room temperature (without intentional heating) using radiofrequency reactive magnetron …
Features of the initial stage of GaN growth on Si (111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
AM Mizerov, SN Timoshnev, MS Sobolev, EV Nikitina… - Semiconductors, 2018 - Springer
The results of investigations of the effect of the initial conditions (nitridation of the Si (111)
substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth …
substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth …
Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si (111) surface nitridation
D Milakhin, T Malin, V Mansurov, Y Maidebura… - Surfaces and …, 2024 - Elsevier
This work is devoted to the study of the influence of controlled Si (111) surface nitridation on
the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered …
the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered …
Selective area growth of high-density GaN nanowire arrays on Si (111) using thin AlN seeding layers
CH Wu, PY Lee, KY Chen, YT Tseng, YL Wang… - Journal of Crystal …, 2016 - Elsevier
Selective area growth (SAG) of high-density (2.5× 10 9 cm− 2) GaN nanowires (NWs) on Si
(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of …
(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of …
A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
The Gasingle bondSi interdiffusion during (Al) GaN/AlN growth on Si substrate by plasma
assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a …
assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a …
Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma …
PV Seredin, D Goloshchapov, AO Radam, AS Lenshin… - Optical Materials, 2022 - Elsevier
This study demonstrates the advantages of using a hybrid compliant substrate containing a
porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon …
porous silicon (porSi) layer, obtained through electrochemical etching of the original silicon …
Eutectic formation, V/III ratio, and controlled polarity inversion in nitrides on silicon
A Roshko, MD Brubaker, PT Blanchard… - … status solidi (b), 2020 - Wiley Online Library
The crystallographic polarity of AlN grown on Si (111) by plasma‐assisted molecular beam
epitaxy is intentionally inverted from N‐polar to Al‐polar at a planar boundary. The position …
epitaxy is intentionally inverted from N‐polar to Al‐polar at a planar boundary. The position …
Polarized emission from InGaN/GaN single nanorod light-emitting diode
InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been
fabricated by nanoimprint lithography and focused ion beam-induced deposition. The …
fabricated by nanoimprint lithography and focused ion beam-induced deposition. The …