Synthesis and applications of III–V nanowires

E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

X Yuan, D Pan, Y Zhou, X Zhang, K Peng… - Applied Physics …, 2021 - pubs.aip.org
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

III–V nanowires and nanowire optoelectronic devices

Y Zhang, J Wu, M Aagesen, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires

H Li, J Tang, Y Kang, H Zhao, D Fang, X Fang… - Applied physics …, 2018 - pubs.aip.org
The GaAsSb-based quantum well plays a very important role in optoelectronic devices due
to its excellent wavelength tunability. When the dimension reduces, the quantum …

Nanowires for high-efficiency, low-cost solar photovoltaics

Y Zhang, H Liu - Crystals, 2019 - mdpi.com
Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar
cells are a good option to harvest this energy. However, it is difficult to balance the cost and …

High‐responsivity photodetection by a self‐catalyzed phase‐pure p‐GaAs nanowire

H Ali, Y Zhang, J Tang, K Peng, S Sun, Y Sun, F Song… - Small, 2018 - Wiley Online Library
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …

Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

G Otnes, M Heurlin, M Graczyk, J Wallentin… - Nano Research, 2016 - Springer
Position controlled nanowire growth is important for nanowire-based optoelectronic
components which rely on light emission or light absorption. For solar energy harvesting …

Growth and characterization of GaP/GaPAs nanowire heterostructures with controllable composition

AD Bolshakov, VV Fedorov, NV Sibirev… - physica status solidi …, 2019 - Wiley Online Library
Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …

New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays

D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh… - Nano …, 2016 - ACS Publications
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …