Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires
H Li, J Tang, Y Kang, H Zhao, D Fang, X Fang… - Applied physics …, 2018 - pubs.aip.org
The GaAsSb-based quantum well plays a very important role in optoelectronic devices due
to its excellent wavelength tunability. When the dimension reduces, the quantum …
to its excellent wavelength tunability. When the dimension reduces, the quantum …
Nanowires for high-efficiency, low-cost solar photovoltaics
Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar
cells are a good option to harvest this energy. However, it is difficult to balance the cost and …
cells are a good option to harvest this energy. However, it is difficult to balance the cost and …
High‐responsivity photodetection by a self‐catalyzed phase‐pure p‐GaAs nanowire
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
G Otnes, M Heurlin, M Graczyk, J Wallentin… - Nano Research, 2016 - Springer
Position controlled nanowire growth is important for nanowire-based optoelectronic
components which rely on light emission or light absorption. For solar energy harvesting …
components which rely on light emission or light absorption. For solar energy harvesting …
Growth and characterization of GaP/GaPAs nanowire heterostructures with controllable composition
AD Bolshakov, VV Fedorov, NV Sibirev… - physica status solidi …, 2019 - Wiley Online Library
Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …
devices with tunable bandgap. However, the lack of insight into the effects of the …