The future of memristors: Materials engineering and neural networks
K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …
booming, and neural networks have become the hot research direction. However, due to the …
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …
the conventional rigid silicon technology, have stimulated fundamental scientific and …
Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Antiferroelectricity in thin-film from first principles
Density-functional calculations are performed to investigate the experimentally reported field-
induced phase transition in thin-film ZrO 2 [J. Müller, Nano Lett. 12, 4318 (2012) NALEFD …
induced phase transition in thin-film ZrO 2 [J. Müller, Nano Lett. 12, 4318 (2012) NALEFD …
A noticeable effect of Pr doping on key optoelectrical properties of CdS thin films prepared using spray pyrolysis technique for high-performance photodetector …
High-quality thin film-based photodetectors containing praseodymium doped cadmium
sulfide (Pr: CdS) were fabricated through spray pyrolysis and studied for various opto …
sulfide (Pr: CdS) were fabricated through spray pyrolysis and studied for various opto …
High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The
well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional …
well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional …
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …
intensively studied for several decades not only for their extraordinary chemical and physical …
Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material
Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …
Pt bottom electrode and two different top electrodes (Ti and TaN) with different work …