Electronics that conform to 3D surfaces are attracting wider attention from both academia
and industry. The research in the field has, thus far, focused primarily on showcasing the …

The piezoresistance effect of silicon has been widely used in mechanical sensors,,, and is
now being actively explored in order to improve the performance of silicon transistors,. In …

Piezoresistance (PZR) is the change in the electrical resistivity of a solid induced by an
applied mechanical stress. Its origin in bulk crystalline materials like silicon is principally a …

Structural reliability of integrated circuit (IC) chips in electronic packages continues to be a
major concern due to ever-increasing die size, circuit densities, power dissipation, operating …

Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …

CMOS analog stress sensor circuits based upon the piezoresistive behavior of MOSFET's
are presented. On the [100] surface, these circuits provide temperature-compensated …

This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is
independent of length. The reported fall-off of the piezoresistive response of the transistor in …

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally
investigated in a large number of depleted silicon nano-and microstructures. The resistance …

Strain engineering is a widely used technique for enhancing the mobility of charge carriers
in semiconductors, but its effect is not fully understood. In this work, we perform first …

Successful application of piezoresistive sensors for stress measurement requires both
properly designed sensors and accurately calibrated values of the piezoresistive coefficients …