Transport properties of 5-nm tunnel field-effect transistor for high-performance switches decorated with blue phosphorene and transition metals
XD Huang, Q Liu, HQ Xie, XQ Deng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
Performance analysis of dielectrically modulated InSb/Si TFET based label free biosensor
This work reports a novel structure of gate dielectric modulated SOI TFET for biological
sensing applications. The device uses InSb/Si heterojunction with N+ pocket at drain …
sensing applications. The device uses InSb/Si heterojunction with N+ pocket at drain …
Impact of drain thickness asymmetry on DC and analog/RF performance of an n-type SiGe/Si double gate TFET
This paper suggests an n-type tunnel field effect transistor (TFET) with asymmetric
architecture. The asymmetry is considered in terms of reduced drain thickness. The drain …
architecture. The asymmetry is considered in terms of reduced drain thickness. The drain …
Effect of temperature on analog/RF and linearity performance of InSb/Si heterojunction SOI TFET
This work reports the effect of temperature on analog/RF and linearity metrics of pocket
doped InSb/Si heterojunction SOI TFET using Silvaco TCAD. In the proposed structure, the …
doped InSb/Si heterojunction SOI TFET using Silvaco TCAD. In the proposed structure, the …
Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability
We present the results of a simulation study of Mg2Si heterojunction-based SOI TFETs using
TCAD. Mg2Si is used as low-bandgap material for the source to achieve high on-current …
TCAD. Mg2Si is used as low-bandgap material for the source to achieve high on-current …
A Review on Role of Epitaxial Engineering in Improving the Drive Current and Subthreshold Swing in Area Scaled Tunnel FETs
In this work, to support the need of ultra-low power applications with" Always-ON" feature, a
review of area-scaled tunneling is carried out in different Field Effect Transistor (FET) …
review of area-scaled tunneling is carried out in different Field Effect Transistor (FET) …