The Impact of Anode p Islands Layout on the Performance of NiO/-GaO Hetero-Junction Barrier Schottky Diodes
F Zhang, X Zheng, Y He, X Wang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, 1-mm2 NiOx/-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with Stripe
and honeycomb anode p+ islands layout are compared in static characteristics, reverse …
and honeycomb anode p+ islands layout are compared in static characteristics, reverse …
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration
Y Liu, L Yuan, C Sun, Y Zhang, X Tang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Micro-pixels based on 3-D 4H-silicon carbide (4H-SiC) NPN phototransistors for
optoelectronic integration are designed and analyzed in this article for the first time. Pixels …
optoelectronic integration are designed and analyzed in this article for the first time. Pixels …
Analysis of transient surge current mechanism in SiC MPS diode with the transition region
A Wang, Y Bai, Y Tang, C Li, Z Han, J Lu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, Sentaurus TCAD was used to study the transient surge current mechanism of
the 4H-SiC merged pin and schottky (MPS) diode. For the first time, a structure combining …
the 4H-SiC merged pin and schottky (MPS) diode. For the first time, a structure combining …
Analysis of breakdown-voltage increase on SiC junction barrier Schottky diode under negative bias stress
FY Jin, PH Chen, WC Hung, WC Hung… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this study, the increment in the breakdown voltage of a SiC junction barrier Schottky (JBS)
diode under negative bias stress (NBS) is investigated. However, when the SiC JBS exhibits …
diode under negative bias stress (NBS) is investigated. However, when the SiC JBS exhibits …
1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow
YL Zhang, P Liu, GY Lei… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
A low value of Schottky barrier height (SBH)(is highly desired to further reduce the power
loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced results in …
loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced results in …
[HTML][HTML] Design and Optimization of High Performance Multi-Step Separated Trench 4H-SiC JBS Diode
J Li, Z Wu, H Sheng, Y Xu, L Zhou - Electronics, 2024 - mdpi.com
In this paper, a novel 3300 V/40 A 4H-SiC junction barrier Schottky diode (JBS) with a multi-
step separated trench (MST) structure is proposed and thoroughly investigated using TCAD …
step separated trench (MST) structure is proposed and thoroughly investigated using TCAD …
The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode
B Zhang, Y Zhong, P Cui, Y Cui, M Xu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The surge current capability is one of the key parameters for the application of silicon
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
Surge current capability evaluation of 6.5 kV SiC MOSFETs with 3D cell layouts
K Naydenov, N Donato, F Udrea… - … Devices and ICs …, 2021 - ieeexplore.ieee.org
This paper presents for the first time a combined experimental/numerical study of the electro-
thermal surge current behaviour of 6.5 kV SiC MOSFETs for various cell layouts. By means …
thermal surge current behaviour of 6.5 kV SiC MOSFETs for various cell layouts. By means …