Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
Disorder effects in nitride semiconductors: impact on fundamental and device properties
Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
The physics of recombinations in III-nitride emitters
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …
emphasis on experimental investigations. After a discussion of various methods of …
On the search for efficient solid state light emitters: Past, present, future
C Weisbuch - ECS Journal of Solid State Science and …, 2019 - iopscience.iop.org
The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …
Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy
We report on the investigation of an electrically biased high efficiency green III-nitride light-
emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron …
emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron …
[HTML][HTML] Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes
Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single
quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well …
quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well …
Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
Electron emission spectroscopy was performed on metalorganic chemical vapor deposition
grown pn−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] …
grown pn−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] …
[HTML][HTML] Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
DJ Myers, AC Espenlaub, K Gelzinyte… - Applied Physics …, 2020 - pubs.aip.org
We report on the direct measurement of hot electrons generated in the active region of blue
light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission …
light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission …
[HTML][HTML] Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN
single quantum wells (SQWs) in the efficiency droop regime using high injection time …
single quantum wells (SQWs) in the efficiency droop regime using high injection time …