Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …

Electronic devices with simultaneous manifestation of multiphysical properties are of great
interest due to their possible application in multifunctional devices. In the present study …

Detection and storage of different light information using electronic devices are important to
emulate image information learning and memory functions like the human visual system. In …

The insertion layer in the ferroelectric multilayer junctions plays a key role in regulating the
energy band structure of interface and their resistive switching behavior. Here, PbZr 0.52 Ti …

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM)
devices with epitaxial (1-x) BaTiO3-xBiFeO3 (x= 0.725)(BT-BFO) film integrated on …

A ferroelectric memristor has attracted much attention due to convenient controlling by
polarization switching, but the resistive switching has been attributed to the drift or charge …

Negative differential resistance and resistance switching behaviors in BaTiO3 thin films |
Journal of Applied Physics | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

Bipolar resistive switching in low cost n-Si/La 2/3 Ca 1/3 MnO 3/M (M= Ti+ Cu) devices was
investigated. For low SET compliance currents (CC), an interfacial-related resistive switching …

Resistively switching oxides are promising materials for use in electronic applications such
as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar …

We investigate an unconventional resistive switching (RS) behavior in La0. 67Sr0.
33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated …