Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects

S Dolabella, A Borzì, A Dommann, A Neels - Small Methods, 2022 - Wiley Online Library
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …

Nanoindentation/scratching at finite temperatures: Insights from atomistic-based modeling

SZ Chavoshi, S Xu - Progress in Materials Science, 2019 - Elsevier
Atomistic-based multiscale and molecular dynamics modeling are powerful tools to simulate
the localized strain problems, offering tremendous opportunities to bridge the knowledge …

Molecular dynamics simulation on crystal defects of single-crystal silicon during elliptical vibration cutting

C Liu, S To, X Sheng, J Xu - International Journal of Mechanical Sciences, 2023 - Elsevier
In recent years, elliptical vibration cutting (EVC) has become a promising technique to
fabricate high quality surface of single-crystal silicon. However, our understanding for its …

Atomic-scale investigation of Pt composition on deformation mechanism of AuPt alloy during nano-scratching process

C Liu, Z Zhuang, J Chen, WS Yip, S To - Surfaces and Interfaces, 2023 - Elsevier
In this research, we performed molecular dynamics (MD) simulation to investigate the
material removal mechanism and subsurface damage formation during nano-scratching of …

Optimized interatomic potential for study of structure and phase transitions in Si-Au and Si-Al systems

S Starikov, I Gordeev, Y Lysogorskiy, L Kolotova… - Computational Materials …, 2020 - Elsevier
Metal-semiconductor nanostructures are key objects for multifunctional electronics and
optical design. We report a new interatomic potential for atomistic simulation of a ternary Si …

Study on the vertical ultrasonic vibration-assisted nanomachining process on single-crystal silicon

J Wang, Y Geng, Z Li, Y Yan… - Journal of …, 2022 - asmedigitalcollection.asme.org
Subsurface damage that is caused by mechanical machining is a major impediment to the
widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro-or …

Material removal and surface evolution of single crystal silicon during ion beam polishing

H Xiao, Y Dai, J Duan, Y Tian, J Li - Applied Surface Science, 2021 - Elsevier
The ion beam polishing techniques for silicon wafers play a key role in the fabrication of
optical element. However, the dynamical ion beam polishing process at nanoscale time and …

Recent advances in precision diamond wire sawing monocrystalline silicon

A Li, S Hu, Y Zhou, H Wang, Z Zhang, W Ming - Micromachines, 2023 - mdpi.com
Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical
stage in solar cell manufacturing. In order to improve the production yield of the cutting …

An analytical model to predict the depth of sub-surface damage for grinding of brittle materials

J Yin, Q Bai, S Goel, P Zhou, B Zhang - CIRP Journal of Manufacturing …, 2021 - Elsevier
This paper proposes an analytical model for predicting grinding-induced sub-surface
damage depth in a silicon wafer. The model integrates the dislocation kinetics for crack …

Effects of initial temperature on the damage of GaN during nanogrinding

C Zhang, X Guo, S Yuan, Z Dong, R Kang - Applied Surface Science, 2021 - Elsevier
Molecular dynamics (MD) were utilized to explore the damage of gallium nitride (GaN) in
nanogrinding at a wide range of initial temperature (100–1000 K). The focus is on the …