Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
Nanoindentation/scratching at finite temperatures: Insights from atomistic-based modeling
SZ Chavoshi, S Xu - Progress in Materials Science, 2019 - Elsevier
Atomistic-based multiscale and molecular dynamics modeling are powerful tools to simulate
the localized strain problems, offering tremendous opportunities to bridge the knowledge …
the localized strain problems, offering tremendous opportunities to bridge the knowledge …
Molecular dynamics simulation on crystal defects of single-crystal silicon during elliptical vibration cutting
In recent years, elliptical vibration cutting (EVC) has become a promising technique to
fabricate high quality surface of single-crystal silicon. However, our understanding for its …
fabricate high quality surface of single-crystal silicon. However, our understanding for its …
Atomic-scale investigation of Pt composition on deformation mechanism of AuPt alloy during nano-scratching process
In this research, we performed molecular dynamics (MD) simulation to investigate the
material removal mechanism and subsurface damage formation during nano-scratching of …
material removal mechanism and subsurface damage formation during nano-scratching of …
Optimized interatomic potential for study of structure and phase transitions in Si-Au and Si-Al systems
S Starikov, I Gordeev, Y Lysogorskiy, L Kolotova… - Computational Materials …, 2020 - Elsevier
Metal-semiconductor nanostructures are key objects for multifunctional electronics and
optical design. We report a new interatomic potential for atomistic simulation of a ternary Si …
optical design. We report a new interatomic potential for atomistic simulation of a ternary Si …
Study on the vertical ultrasonic vibration-assisted nanomachining process on single-crystal silicon
J Wang, Y Geng, Z Li, Y Yan… - Journal of …, 2022 - asmedigitalcollection.asme.org
Subsurface damage that is caused by mechanical machining is a major impediment to the
widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro-or …
widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro-or …
Material removal and surface evolution of single crystal silicon during ion beam polishing
H Xiao, Y Dai, J Duan, Y Tian, J Li - Applied Surface Science, 2021 - Elsevier
The ion beam polishing techniques for silicon wafers play a key role in the fabrication of
optical element. However, the dynamical ion beam polishing process at nanoscale time and …
optical element. However, the dynamical ion beam polishing process at nanoscale time and …
Recent advances in precision diamond wire sawing monocrystalline silicon
A Li, S Hu, Y Zhou, H Wang, Z Zhang, W Ming - Micromachines, 2023 - mdpi.com
Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical
stage in solar cell manufacturing. In order to improve the production yield of the cutting …
stage in solar cell manufacturing. In order to improve the production yield of the cutting …
An analytical model to predict the depth of sub-surface damage for grinding of brittle materials
J Yin, Q Bai, S Goel, P Zhou, B Zhang - CIRP Journal of Manufacturing …, 2021 - Elsevier
This paper proposes an analytical model for predicting grinding-induced sub-surface
damage depth in a silicon wafer. The model integrates the dislocation kinetics for crack …
damage depth in a silicon wafer. The model integrates the dislocation kinetics for crack …
Effects of initial temperature on the damage of GaN during nanogrinding
C Zhang, X Guo, S Yuan, Z Dong, R Kang - Applied Surface Science, 2021 - Elsevier
Molecular dynamics (MD) were utilized to explore the damage of gallium nitride (GaN) in
nanogrinding at a wide range of initial temperature (100–1000 K). The focus is on the …
nanogrinding at a wide range of initial temperature (100–1000 K). The focus is on the …