A silicon-based monolithic laser source has long been envisioned as a key enabling
component for large-scale electronic–photonic integration in future generations of high …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers Page 1
Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers Rodolfo …

The search for silicon-based light sources is an active research area. Bulk silicon is an
indirect band semiconductor material with a strong disparity in radiative and nonradiative …

This chapter reviews the research on direct gap light emission and optical gain from Ge,
including historical aspects, theoretical modeling, band‐engineeringapproaches, materials …

Band-gap engineering of bulk germanium (Ge) holds the potential for realizing a laser
source, permitting full integration of monolithic circuitry on CMOS platforms. Techniques rely …

Dans ce travail de thèse, nous avons étudié différentes approches qui devraient permettre
d'obtenir l'effet laser dans le germanium. Nous avons pu montrer expérimentalement …

The rapid development of multi/manycore technologies offers the opportunity for highly
parallel architectures implemented on a single chip. While the first, low parallelism multicore …