To date, the only dopant available for bulk diamond with good controllability is boron, which
acts as an acceptor and can be incorporated in relatively high concentrations, allowing the …

In this paper we give the first report of a high-density phase of condensed electron–hole
drops in diamond. Synthetic crystals grown by the high pressure–high temperature …

We have measured the refractive index n of diamond for temperatures up to 925 K from
Fabry-Perot resonances in far-infrared transmission spectra. For the highest temperatures …

The spin–orbit splitting Δ 0= 13 meV calculated ab initio for the Γ8+ valence band state of
diamond differs from that observed for acceptors (≃ 2 meV) and exciton states (≃ 7meV). A …

The Lyman spectrum of substitutional boron acceptors in diamonds with natural composition
and that in a 13 C diamond exhibit remarkably similar features, but shifted to higher energies …

Many outstanding optical properties of diamond make it an attractive material for optical and
optoelectronic applications. Diamond has a very wide optical transparency band ranging …

Recently published data have shown that state‐of‐the‐art phosphorus‐doped
homoepitaxial CVD diamond layers exhibit 'perfect'bound exciton cathodoluminescence …

We use electronic Raman scattering for studying the band structure of the ns boron acceptor
states in diamond. For the first time, the spin–orbit splitting of these acceptor states and the …

Non‐equilibrium growth of synthetic diamond layers by chemical vapour deposition (CVD)
techniques on heterosubstrates has largely been improved over the past decade. On silicon …

The success in the growth of man‐made, isotopically controlled single crystals of 12C1—
x13Cx diamonds (0≤ x≤ 1) has created splendid spectroscopic opportunities to address …