Achieving reliable and ultrafast memristors via artificial filaments in silk fibroin
The practical implementation of memristors in neuromorphic computing and biomimetic
sensing suffers from unexpected temporal and spatial variations due to the stochastic …
sensing suffers from unexpected temporal and spatial variations due to the stochastic …
2D-material-based volatile and nonvolatile memristive devices for neuromorphic computing
Neuromorphic computing can process large amounts of information in parallel and provides
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …
Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability
F Huang, S Ge, R Wei, J He, X Ma, J Tao… - … Applied Materials & …, 2022 - ACS Publications
Halide perovskites featuring remarkable optoelectronic properties hold great potential for
threshold switching devices (TSDs) that are of primary importance to next-generation …
threshold switching devices (TSDs) that are of primary importance to next-generation …
Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part I: Experimental …
P Bousoulas, C Tsioustas, J Hadfield… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The development of low-power neurons with an intrinsic degree of stochasticity is
considered quite important for the emulation of the respective probabilistic procedures that …
considered quite important for the emulation of the respective probabilistic procedures that …
Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer
Electrochemical metallization threshold switch (ECM TS) has received significant attention
for various applications owing to its high ON/OFF ratio, fast switching characteristics, and …
for various applications owing to its high ON/OFF ratio, fast switching characteristics, and …
Low threshold voltage, highly stable electroforming-free threshold switching characteristics in VOx films-based device
G Li, J Wei, H Wang, R Xiong, D Wang, Y Zhu, Y Liu… - Ceramics …, 2021 - Elsevier
Threshold switching (TS) devices have evolved as one of the most promising elements in
memory circuit due to their important significance in suppressing crosstalk current in the …
memory circuit due to their important significance in suppressing crosstalk current in the …
Highly reliable selection behavior with controlled Ag doping of nano-polycrystalline ZnO Layer for 3D X-Point framework
In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline
ZnO switching layer (SL) having (002) preferred orientation has been manifested, without …
ZnO switching layer (SL) having (002) preferred orientation has been manifested, without …
[HTML][HTML] Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector
via a facile co-sputtering technique is investigated without using an Ag active metal layer …
via a facile co-sputtering technique is investigated without using an Ag active metal layer …
A Steep-slope Threshold Switching Selector Using Silver-doped Polycrystalline Zinc Oxide: Fabrication, Characterization, & Application for 3D X-point Memory & …
A Sahota - 2021 - utd-ir.tdl.org
An assortment of emerging non-volatile memory (NVM) devices has displayed a surge of
interest in being investigated for their implementation in energy-efficient bio-inspired …
interest in being investigated for their implementation in energy-efficient bio-inspired …