Oxide semiconductor thin‐film transistors: a review of recent advances
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …
applications. The key components are wide bandgap semiconductors, where oxides of …
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can
cause a large negative shift (> 7.1 V) in threshold voltage, something frequently attributed to …
cause a large negative shift (> 7.1 V) in threshold voltage, something frequently attributed to …
Insights into the structure of the stable and metastable compounds
Using first-principles calculations, we identify the mechanisms that lead to the lowest energy
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …
Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor
A Sato, K Abe, R Hayashi, H Kumomi… - Applied Physics …, 2009 - pubs.aip.org
A fabrication process of coplanar homojunction thin-film transistors (TFTs) is proposed for
amorphous In–Ga–Zn–O ( a-IGZO), which employs highly doped contact regions naturally …
amorphous In–Ga–Zn–O ( a-IGZO), which employs highly doped contact regions naturally …
Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors
MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator
Oxide thin-film transistors (TFTs) should be manufactured with high mobility and stability
based on a self-aligned top-gate structure to drive high-end displays. In this study, the effect …
based on a self-aligned top-gate structure to drive high-end displays. In this study, the effect …
Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
KH Choi, HK Kim - Applied Physics Letters, 2013 - pubs.aip.org
Ti contact properties and their electrical contribution to an amorphous InGaZnO (a-IGZO)
semiconductor-based thin film transistor (TFT) were investigated in terms of chemical …
semiconductor-based thin film transistor (TFT) were investigated in terms of chemical …
Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
We report on the origin of threshold voltage shift with the thickness of amorphous InGaZnO
channel layer deposited by rf magnetron sputter at room temperature, using density of states …
channel layer deposited by rf magnetron sputter at room temperature, using density of states …
Design of InZnSnO semiconductor alloys synthesized by supercycle atomic layer deposition and their rollable applications
Amorphous InGaZnO semiconductors have been rapidly developed as active charge-
transport materials in thin film transistors (TFTs) because of their cost effectiveness …
transport materials in thin film transistors (TFTs) because of their cost effectiveness …
Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics
Neuromorphic devices that mimic a human brain have attracted significant attention in the
field of next-generation semiconductors. The human brain can efficiently process information …
field of next-generation semiconductors. The human brain can efficiently process information …