From molecules to bismuth oxide-based materials: Potential homo-and heterometallic precursors and model compounds

M Mehring - Coordination Chemistry Reviews, 2007 - Elsevier
Bismuth-containing heterometallic oxides are promising candidates for a variety of
applications with respect to the microelectronics industry. This is not only because of their …

Structural evolution of Bi 2 O 3 prepared by thermal oxidation of bismuth nano-particles

AJ Salazar-Pérez, MA Camacho-López… - Superficies y …, 2005 - scielo.org.mx
Bismuth nano-sized particles were prepared by the chemical reduction method. These
particles were characterized by HR-TEM, X-Ray Diffraction and Micro-Raman Spectroscopy …

Temperature-dependent band gap characteristics of Bi12SiO20 single crystals

M Isik, S Delice, NM Gasanly, NH Darvishov… - Journal of Applied …, 2019 - pubs.aip.org
Bi 12 SiO 20 single crystals have attracted interest due to their remarkable photorefractive
characteristics. Since bandgap and refractive index are related theoretically to each other, it …

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

J Harjuoja, S Väyrynen, M Putkonen, L Niinistö… - Journal of Crystal …, 2006 - Elsevier
Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition
(ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi …

Preparation, characterization and mechanical properties of Bi12SiO20–PMMA composite films

RM Dukali, I Radovic, DB Stojanovic… - Journal of alloys and …, 2014 - Elsevier
This paper investigates processing and characterization of polymer composite material
PMMA–Bi 12 SiO 20 (BSO). Thin films of pure PMMA and composites with 0.5 and 1.0 wt …

New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon

J Harjuoja, T Hatanpää, M Vehkamäki… - Chemical Vapor …, 2005 - Wiley Online Library
Bismuth silicate thin films were deposited using atomic layer deposition (ALD) with a novel
precursor, Bi (CH2SiMe3) 3, serving as both bismuth and silicon source. Precursor …

Raman spectroscopy evidence of inhomogeneous disorder in the bismuth-oxygen framework of BiInO and other sillenites

DJ Arenas, T Jegorel, C Knab, LV Gasparov… - Physical Review B …, 2012 - APS
We report the room-temperature Raman spectra of polycrystalline Bi 25 InO 39 for the first
time along with the spectrum of Bi 25 FeO 39. Both samples were synthesized by the …

[PDF][PDF] Thermoluminescence response of aluminum oxide thin films to beta-particle and UV radiation

JE Villarreal, L Escobar, E Camps, PR González… - Superficies y …, 2001 - redalyc.org
Materials in thin film form have received great attention mainly because of their singular
properties, which may differ significantly from their bulk attributes making them attractive for …

Thermoluminescence of aluminum oxide thin films subject to ultraviolet irradiation

L Escobar-Alarcón, E Villagrán, E Camps, S Romero… - Thin Solid Films, 2003 - Elsevier
The thermoluminescence (TL) properties of amorphous aluminum oxide thin films subjected
to ultraviolet (UV) irradiation are reported. Aluminum oxide thin films were prepared by laser …

First-principles study of the phonon modes in bismuth sillenites

DJ Arenas, C Middleton, AF Kemper - Physical Review B, 2015 - APS
Density functional theory calculations of the vibrational modes of Bi 12 SiO 20 are
presented, with a detailed assignment and geometry investigation of the vibrational modes …