Advances in solid state white lighting technologies witness the explosive development of
phosphor materials (down-conversion luminescent materials). A large amount of evidence …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

p-type doping of ZnO has thus-far proved difficult. Some reports indicate that Li substituting
for Zn would be a shallow acceptor, with work on ferroelectric material showing that Li can …

Detailed analysis of the defect-related photoluminescence (PL) in semi-insulating and n-
type Be-doped GaN samples grown by molecular beam epitaxy is presented. The dominant …

Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method
based on density functional theory (DFT), we have investigated the native defect properties …

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So far, most of the studies on GaN doped with beryllium have mainly concentrated on
possible p-type doping. Unfortunately, realization of p-type conductivity in such a way …

Local density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE)
dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and …

We have studied beryllium defects in GaAs and GaAsN from first principles, concentrating on
the nitrogen effect on the defect formation and the beryllium effect on the nitrogen alloying …