Thermal transport in defective and disordered materials
With significant recent advancements in thermal sciences—such as the development of new
theoretical and experimental techniques, and the discovery of new transport mechanisms—it …
theoretical and experimental techniques, and the discovery of new transport mechanisms—it …
Memristor fabrication through printing technologies: a review
Memristor got a significant attraction to be the next generation memory device due to its
small size, simple architecture, high density, and low power consumption. A memristor is a …
small size, simple architecture, high density, and low power consumption. A memristor is a …
Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM
HfOx-Based resistive random-access memory (RRAM) devices are being widely considered
as both non-volatile memories for digital computation and synaptic memory for …
as both non-volatile memories for digital computation and synaptic memory for …
Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set …
Understanding the resistance switching behavior of oxide-based memristive devices is
critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural …
critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural …
Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer
As artificial intelligence and big data become increasingly prevalent, resistive random-
access memory (RRAM) has become one of the most promising alternatives for storing …
access memory (RRAM) has become one of the most promising alternatives for storing …
[HTML][HTML] Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
As the demand for computing applications capable of processing large datasets increases,
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
Modulating the resistive switching stability of HfO 2-based RRAM through Gd doping engineering: DFT+ U
D Zhang, J Wang, Q Wu, Y Du - Physical Chemistry Chemical Physics, 2023 - pubs.rsc.org
Oxide-based resistive random access memory (RRAM) is standing out in both non-volatile
memory and the emerging field of neuromorphic computing, with the consequence of …
memory and the emerging field of neuromorphic computing, with the consequence of …
Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses
Hafnium oxide non-volatile memories have shown promise as an artificial synapse in
neuromorphic computing architectures. However, there is still a need to fundamentally …
neuromorphic computing architectures. However, there is still a need to fundamentally …
Nano‐Memristors with 4 mV Switching Voltage Based on Surface‐Modified Copper Nanoparticles
The development of memristors operating at low switching voltages< 50 mV can be very
useful to avoid signal amplification in many types of circuits, such as those used in …
useful to avoid signal amplification in many types of circuits, such as those used in …
Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
Moving toward the future computing and non-volatile memory, memristors have gained wide
attention for their in-memory computing and neuromorphic computing applications. The …
attention for their in-memory computing and neuromorphic computing applications. The …