Spin-transfer torque switched magnetic tunnel junction for memory technologies
JZ Sun - Journal of Magnetism and Magnetic Materials, 2022 - Elsevier
A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
Conventional MOS integrated circuits and systems suffer serve power and scalability
challenges as technology nodes scale into ultra-deep-micron technology nodes (eg, below …
challenges as technology nodes scale into ultra-deep-micron technology nodes (eg, below …
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–
orbit torque is key to the development of future spintronic memories. However, both …
orbit torque is key to the development of future spintronic memories. However, both …
Magnetoresistive random access memory: Present and future
S Ikegawa, FB Mancoff, J Janesky… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …
memory technology because of its long data retention and robust endurance. Initial MRAM …
Magnetoresistive random access memory
In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …
presented. The various MRAM generations are described with a particular focus on spin …
[HTML][HTML] Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
K Watanabe, B Jinnai, S Fukami, H Sato… - Nature …, 2018 - nature.com
Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access
memories. Successful implementation depends on a simultaneous achievement of low …
memories. Successful implementation depends on a simultaneous achievement of low …
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
H Sato, ECI Enobio, M Yamanouchi, S Ikeda… - Applied Physics …, 2014 - pubs.aip.org
We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with
a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm …
a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm …
Spin-transfer torque memories: Devices, circuits, and systems
Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
Recently, spin-transfer torque magnetic random access memory (STT-MRAM) has been
considered as a promising universal memory candidate for future memory and computing …
considered as a promising universal memory candidate for future memory and computing …
Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory
The dependence of the write-error rate (WER) on the applied write voltage, write pulse
width, and device size was examined in individual devices of a spin-transfer torque (STT) …
width, and device size was examined in individual devices of a spin-transfer torque (STT) …