With the development of advanced electronic devices and electric power systems, polymer-
based dielectric film capacitors with high energy storage capability have become particularly …

Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of
interest in ferroelectric memory devices. Although both experimental and theoretical studies …

Using a combination of Landau theoretical analysis and first-principles calculations, we
establish a spontaneous symmetry breaking of the metallic state of the 1 T monolayer of …

Neuron is the basic computing unit in brain-inspired neural networks. Although a multitude
of excellent artificial neurons realized with conventional transistors have been proposed …

A comprehensive review of aging and fatigue phenomena in bulk polycrystalline
ferroelectrics is presented. Three material classes are covered, namely the most widely used …

The bond valence model was described comprehensively in my 2002 book, The Chemical
Bond in Inorganic Chemistry: The Bond Valence Model, 1 where references to earlier work …