Synthesis and hybridization of CuInS 2 nanocrystals for emerging applications
Copper indium sulfide (CuInS2) is a ternary A (I) B (III) X (VI) 2-type semiconductor featuring
a direct bandgap with a high absorption coefficient. In attempts to explore their practical …
a direct bandgap with a high absorption coefficient. In attempts to explore their practical …
Highly luminescent scintillating hetero-ligand MOF nanocrystals with engineered Stokes shift for photonic applications
Large Stokes shift fast emitters show a negligible reabsorption of their luminescence, a
feature highly desirable for several applications such as fluorescence imaging, solar-light …
feature highly desirable for several applications such as fluorescence imaging, solar-light …
Dopant diffusion equilibrium overcoming impurity loss of doped QDs for multimode anti‐counterfeiting and encryption
B Bai, M Xu, J Li, S Zhang, C Qiao… - Advanced Functional …, 2021 - Wiley Online Library
High ion diffusivity of Cu+ dopants accelerates outdiffusion in quantum dots (QDs) at high
temperatures. This kind of self‐purification gives rise to a sharp decrease in dopant …
temperatures. This kind of self‐purification gives rise to a sharp decrease in dopant …
Electronic structure study of dual-doped II–VI semiconductor quantum dots towards single-source white light emission
Single-source white light emitting colloidal semiconductor quantum dots (QDs) is one of the
most exciting and promising high-quality solid-state light sources to meet the current global …
most exciting and promising high-quality solid-state light sources to meet the current global …
Single particle level dynamics of photoactivation and suppression of Auger recombination in aqueous Cu-doped CdS quantum dots
Cu-doped CdS quantum dots (QDs) have been synthesized in water using 3-
mercaptopropionic acid (3-MPA) as the capping agent. They exhibit intense …
mercaptopropionic acid (3-MPA) as the capping agent. They exhibit intense …
Emerging II-VI wide bandgap semiconductor device technologies
The demand for advanced electronic and optoelectronic devices has driven significant
research and development efforts toward exploring emerging semiconductor materials with …
research and development efforts toward exploring emerging semiconductor materials with …
Transition metal doping in CdS quantum dots: Diffusion, magnetism, and ultrafast charge carrier dynamics
S Chakraborty, P Mondal, M Makkar… - Chemistry of …, 2023 - ACS Publications
Transition metal (TM) doping in pristine II–VI semiconductor quantum dots (QDs) is known to
add several otherwise unavailable properties by introducing midgap states in the host …
add several otherwise unavailable properties by introducing midgap states in the host …
Impacts of Dopant and Post-Synthetic Heat-Treatment on Carrier Relaxation of Cu2+-Doped CdSe Nanoplatelets
Doped II–VI semiconductor two-dimensional (2D) nanoplatelets (NPLs) are emergent
optoelectronic materials due to one-dimensional strong quantum confinement. Here, we …
optoelectronic materials due to one-dimensional strong quantum confinement. Here, we …
Insights into the oxidation state of Cu dopants in II–VI semiconductor nanocrystals
P Mondal, R Viswanatha - The Journal of Physical Chemistry …, 2022 - ACS Publications
Luminescent Cu-doped semiconductor nanocrystals have played a pivotal role in the
emergence of lighting and display applications for a long time. However, consensus …
emergence of lighting and display applications for a long time. However, consensus …
Intense photoluminescence from Cu-doped CdSe nanotetrapods triggered by ultrafast hole capture
Brightly photoluminescent Cu-doped CdSe nanotetrapods (NTPs) have been prepared by a
modified hot injection method. Their photoluminescence (PL) has a quantum yield of 38 …
modified hot injection method. Their photoluminescence (PL) has a quantum yield of 38 …