Design of UWB LNA using active resistors in 0.18 µm CMOS technology

A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS

P Luo, M Liu, L Chen, J Gao, Z Zhu, Y Yang - Analog Integrated Circuits …, 2019 - Springer
A low noise figure (NF) and high power gain (S21) 3–10 GHz ultra-wideband (UWB) low
noise amplifier (LNA) in 65 nm CMOS technology is proposed for UWB system which has a …
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