Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma
H Kakiuchi, H Ohmi, K Yasutake - Journal of Physics D: Applied …, 2018 - iopscience.iop.org
Amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) films were deposited in
atmospheric-pressure (AP) He/H 2/SiH 4 plasma excited by a 150 MHz very high-frequency …
atmospheric-pressure (AP) He/H 2/SiH 4 plasma excited by a 150 MHz very high-frequency …
Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films
H Kakiuchi, H Ohmi, K Yasutake - Journal of Applied Physics, 2021 - pubs.aip.org
ABSTRACT Atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition of
silicon (Si) films was numerically simulated. The AP plasma used for Si depositions was …
silicon (Si) films was numerically simulated. The AP plasma used for Si depositions was …
Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120° C) thin film transistors
H Kakiuchi, H Ohmi, K Yasutake - Journal of Physics D: Applied …, 2020 - iopscience.iop.org
With the aim of improving silicon (Si) film quality deposited by atmospheric-pressure (AP)
plasma-enhanced chemical vapor deposition at a low substrate temperature of 120 C, we …
plasma-enhanced chemical vapor deposition at a low substrate temperature of 120 C, we …