Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

In order to effectively remove the residual Ge atoms at the surface of channel and improve
the interfacial characteristic of gate-all-around (GAA) Si nanosheet field effect transistors, a …

Based on the bulk-Si substrate, the CMOS tree-like FETs including the FishboneFETs with
bottom SiGe nano-fin and the TreeFETs without bottom SiGe nano-fin were both designed …

Abstract Electrical characteristics of Si 0.7 Ge 0.3/Si heterostructure-based n-type gate-all-
around MOSFETs (GAA MOSFETs) are reported in this work through experimental and …

Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have
demonstrated promising quantum properties and the potential application of advanced Si …

This work develops a regrown fishbone trench (RFT) structure in selective area growth
(SAG) technique to fabricate recessed-gate normally off GaN metal–insulator …

The implementation of vertically stacked gate-all-around nanosheet FET (GAA NSFET) may
help improve the performance of static random access memory (SRAM) for the design …

This paper explores the impact of ambient temperature on the RF performance parameters
of CombFET device. The CombFET has been considered one of the most realistic …

In this work, the electro-thermal properties of TreeFET, which combines vertically stacked
nanosheet (NS) and fin-shaped interbridge (IB) channels, are investigated in terms of …

Various solutions have been proposed in recent years to address the problem of short-
channel effects (SCEs) in the field effect transistors (FETs) during downscaling [1–4]. The …