US11114332B2 - Semiconductor on insulator structure comprising a plasma nitride layer and
method of manufacture thereof - Google Patents US11114332B2 - Semiconductor on insulator …

A method of preparing a single crystal semiconductor handle wafer in the manufacture of a
semiconductor-on-insulator device is provided. The single crystal semiconductor handle …

Filed: Jul. 26, 2016(57) A method for fabricating dual-tier radio-frequency devices Related
US Application Data involves providing a silicon-on-insulator integrated circuit (60) …

US9831115B2 - Process flow for manufacturing semiconductor on insulator structures in
parallel - Google Patents US9831115B2 - Process flow for manufacturing semiconductor on …

US20160379943A1 - Method and apparatus for high performance passive-active circuit
integration - Google Patents US20160379943A1 - Method and apparatus for high …

A high resistivity single crystal semiconductor handle structure for use in the manufacture of
SOI structure is provided. The handle structure comprises an intermediate semiconductor …

US10468295B2 - High resistivity silicon-on-insulator structure and method of manufacture thereof
- Google Patents US10468295B2 - High resistivity silicon-on-insulator structure and method of …

A semiconductor on insulator multilayer structure is provided. The multilayer comprises a
high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or …

(57) ABSTRACT A multilayer semiconductor on insulator structure is pro vided in which the
handle substrate and an epitaxial layer in interfacial contact with the handle substrate …

2013/0120951 A1 5/2013 Zuo et al. 2013/0122672 AL 5/2013 Or-Bach et al. 2013/0168835
A1 7/2013 Botula et al. 2013/0193445 A1 8/2013 Dennard et al. 2013/0294038 Al 11/2013 …