The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Accelerating interest in silicon nitride thin film material system continues in both academic
and industrial communities due to its highly desirable physical, chemical, and electrical …

The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …

Controlled fabrication of devices for plasmonics on suspended graphene enables obtaining
tunable localized surface plasmon resonances (LSPRs), reducing the red-shift of LSPRs …

Considering the challenges in reactivity, potential contamination, and substrate selectivity,
the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing …

Silicon nitride (SiNx) thin films using 1, 3-di-isopropylamino-2, 4-dimethylcyclosilazane
(CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated …

We studied the chemisorption of silicon tetrachloride (SiCl4) on the NH2/NH-terminated
silicon nitride slab model using density functional theory (DFT) for atomic layer deposition …

I-line stepper is widely used in large scale device manufacturing with limited achievable
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …

In this work, SiC x N y-based resistive switching memory by using a single precursor for the
back end of line (BEOL) integration has been investigated. SiC x N y films were deposited …

In this study, we explored the key properties and functionalities of plasma enhanced atomic
layer deposition (PEALD) SiN x films, synthesized using different deposition temperatures …